SOLUTION PROCESSED ZINC TIN OXIDE SEMICONDUCTOR FOR THIN FILM TRANSISTORS

Metadata Show full item record. Science , Semiconductor Science and Technology, Vol. This data will be updated every 24 hours. Factors controlling electron transport properties in transparent amorphous oxide semiconductors. Nature ,

X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors. Thin Solid Films , Applied Physics Letters, Vol. Electronic structures above mobility edges in crystalline and amorphous in-Ga-Zn-O: Japanese Journal of Applied Physics.

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region.

Science Journal of the Korean Physical Society, Vol. Langmuir 25 The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors. Ink-jet-printed zinc-tin-oxide thin-film transistors and circuits with rapid thermal annealing process.

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X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave solugion. Zinc tin oxide thin-film transistors via reactive sputtering using a metal target.

Young Bum Yoo et al Jpn. Thin Solid Films38 Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles.

JavaScript is disabled for your browser. Thin-film transistor solution processed zinc tin oxide semiconductor for thin film transistors in single-crystalline transparent oxide semiconductor. Who would you like to send this to? Export citation Request permission. Charge transport in the zinc-tin oxide field-effect transistors is oxice investigated.

Solution-processed zinc-tin oxide thin-film transistors and circuit applications

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Journal of Materials Chemistry C, Vol. This article has been cited by the following publications. Electron Devices 57 Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors.

Charge transport in solution-processed zinc tin oxide thin film transistors

Abstract views Abstract views reflect the number of visits to the article landing page. In addition, velocity distribution of charge carriers is studied with a time-resolved technique.

Cited by 12 Cited by. Solution-processed zinc—tin oxide thin-film transistors with low interfacial trap density and improved performance. Abstract Amorphous oxide semiconductors are of potential interest in the display industry due to their high carrier mobility, transparency at visible wavelengths and excellent operational stability.

Son, Youngbae and Peterson, Rebecca L Percolation conduction examined by analytical model. The devices exhibit percolation conduction with Fermi level pinning at high charge carrier concentrations. Analytical modeling of IGZO thin-film transistors based on the exponential distribution of deep and tail state.

By continuing to use this site you agree to our use of cookies. High performance solution-processed amorphous zinc tin oxide thin film transistor. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors.

Solution-processed zinc-tin oxide thin-film transistors and circuit applications. Thin Solid Films Department Electrical and Computer Engineering. High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability.

Factors controlling electron transport properties in transparent amorphous oxide semiconductors.